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C Die Dram Memory Chip Ddr4

1-10 Results for

c die dram memory chip ddr4

from 9 Products

H5AG36EXNDX017N Memory IC Chip 8G DDR4 Memory IC FBGA96 DDR4 DRAM Memory Chips

China H5AG36EXNDX017N Memory IC Chip 8G DDR4 Memory IC FBGA96 DDR4 DRAM Memory Chips on sale
H5AG36EXNDX017N Memory IC Chip 8G DDR4 Memory IC FBGA96 DDR4 DRAM Memory Chips [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

MT40A512M16LY-075-E EMMC Memory Chips DRAM DDR4 8G 512MX16

China MT40A512M16LY-075-E EMMC Memory Chips DRAM DDR4 8G 512MX16 on sale
MT40A512M16LY-075-E Original DRAM DDR4 8G 512MX16 FBGA Memory Data Storage Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC ......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

MT40A1G16TB-062E:F Flash Memory Chips 96-TFBGA Package - High Performance Low Power Consumption for Advanced Storage Sol

China MT40A1G16TB-062E:F Flash Memory Chips 96-TFBGA Package - High Performance Low Power Consumption for Advanced Storage Sol on sale
... Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 1.5 GHz Write Cycle Time - Word, Page 15ns Access Time 19 ns ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Micron DDR4-3200 2gx8 (16GB) Ind Mt40A2g8SA-062e It: F Computer Memory Chip DRAM Chips

China                    Micron DDR4-3200 2gx8 (16GB) Ind Mt40A2g8SA-062e It: F Computer Memory Chip DRAM Chips              on sale
Company Profile Infinites Tech, a subsidiary of CCFEX (China) LIMITED, is dedicated to the research and manufacturing of high-quality Computer memories solutions. The company specializes in the development of computer memory modules, SSD solid-state drives......
Infinites Tech Co., Ltd

Address: Room 3A18,Building A,Goldman Sachs Building, No.18, Central Road,Wanfeng Community,Xinqiao Street,Bao 'an District,Shenzhen,China.

DDR4 4Gb SDRAM Chip 32Mx4 FBGA-96 1.2V 8K Refresh IMD256M16R4ABD8LY

China DDR4 4Gb SDRAM Chip 32Mx4 FBGA-96 1.2V 8K Refresh IMD256M16R4ABD8LY on sale
DDR4 4Gb SDRAM Memory Chip Refresh IMD256M16R4ABD8LY DDR4 SDRAM IMD256M16R4ABD8LY – 32 Meg x 16 x 8 Banks Features VDD = VDDQ = 1.2V ±60mV VPP = 2.5V, –125mV/+250mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O TC of 0°C......
Shenzhen Filetti Technology Co., LTD

Address: Room E, 22nd Floor, Block B, Duhui 100 Building, Huaqiangbei Subdistrict, Futian District, Shenzhen City

MT41J128M16HA-15E:D TR ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM

China MT41J128M16HA-15E:D TR ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM on sale
Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

MT41J128M16HA-15E-D ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM

China MT41J128M16HA-15E-D ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM on sale
Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

MT40A512M16LY-062E IT:E

China MT40A512M16LY-062E IT:E on sale
MT40A512M16LY-062E IT:E MemoryType Volatile MemoryFormat DRAM Technology SDRAM - DDR4 MemorySize 8Gb (512M x 16) MemoryInterface Parallel ClockFrequency 1.6 GHz WriteCycleTime-WordPage - AccessTime - Voltage-Supply 1.14V ~ 1.26V OperatingTemperature -40......
Yingxinyuan Int'l(Group) Ltd.

Address: 7F, Building F, Longjing Science park, 335 Bulong Road, Ma Antang Community, Bantian Street, Longgang District, Shenzhen, China

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