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...POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Specifications: Datasheets...
...POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Specifications: Datasheets... more
Brand Name:MOT
Model Number:MRF581
Place of Origin:Microsemi Power Products Group
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AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ... more
Brand Name:Analog Devices Inc.
Model Number:AD9364BBCZ
Place of Origin:Multi-origin
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
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... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ... more
Brand Name:ST
Model Number:TIP42C
Place of Origin:Original Factory
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...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power...
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power... more
Brand Name:Hua Xuan Yang
Model Number:30P06D TO-252
Place of Origin:ShenZhen China
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Pixel Rgb Rgbw Light Emitting Price 3 Pin Low Power Consumption Led Diode Part number ILED diode DC New year Datasheet Please contact me Package type Surface mount Application PCBA Whatsapp 86- 15102073750 Detail: Application: Shipment: Payment term:
Pixel Rgb Rgbw Light Emitting Price 3 Pin Low Power Consumption Led Diode Part number ILED diode DC New year Datasheet Please contact me Package type Surface mount Application PCBA Whatsapp 86- 15102073750 Detail: Application: Shipment: Payment term: more
Brand Name:Original
Model Number:Led diode
Place of Origin:Original
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...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... more
Brand Name:onsemi
Model Number:SGL160N60UFD
Place of Origin:Original Factory
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...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
Model Number:PBSS4160T,215
Place of Origin:CN
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...Power Transistor / Plastic P Channel Transistor Mosfet Power Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Mosfet Power Transistor Applications High efficiency switch mode power supplies Power...
...Power Transistor / Plastic P Channel Transistor Mosfet Power Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Mosfet Power Transistor Applications High efficiency switch mode power supplies Power... more
Brand Name:JC
Model Number:OSPF18N50C
Place of Origin:Jiangxi, China
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...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
Brand Name:Original
Model Number:FQPF18N60C
Part no.:FQPF18N60C
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...Power Transistor 8-PowerVDFN Integrated Circuit Chip Product Description Of IAUC60N04S6N031H IAUC60N04S6N031H is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet...
...Power Transistor 8-PowerVDFN Integrated Circuit Chip Product Description Of IAUC60N04S6N031H IAUC60N04S6N031H is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet... more
Brand Name:Original Factory
Model Number:IAUC60N04S6N031H
Place of Origin:CN
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... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • more
Brand Name:Anterwell
Model Number:MJD112T4G
Place of Origin:original factory
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New and Original Transistor 2SC2240-GR TOSHIBA Transistor silicon NPN epitaxial type (PCT process) Details , Pls Reference DataSheet Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic.com Skype:hkdeli881
New and Original Transistor 2SC2240-GR TOSHIBA Transistor silicon NPN epitaxial type (PCT process) Details , Pls Reference DataSheet Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic.com Skype:hkdeli881 more
Brand Name:DELI
Model Number:2SC2240 - GR
Place of Origin:Japan
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... for various power applications, providing specific electrical characteristics such as collector current (IC), power dissipation (PD), and breakdown voltages (BVCBO, BVCEO). The product line includes standard transistors and Darlington configurations,
... for various power applications, providing specific electrical characteristics such as collector current (IC), power dissipation (PD), and breakdown voltages (BVCBO, BVCEO). The product line includes standard transistors and Darlington configurations, more
Model Number:CENW92
Current - Collector Cutoff:-
Pd - Power Dissipation:2.5W
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... description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon transistor arrays. Each
... description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon transistor arrays. Each more
Brand Name:TI
Model Number:ULN2003APWR
Place of Origin:Original
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... more
Description:Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole MJE182G
Stock:In Stock
Minimum Order Quantity:10
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...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power more
Brand Name:NOVA acoustics
Model Number:MA-4400
Place of Origin:Guangzhou, China
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...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... more
Brand Name:INNOTION
Model Number:YP01401650T
Place of Origin:Jiangsu, China
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... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall...
... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall... more
Description:MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
Stock:1000PCS
Minimum Order Quantity:1pcs
