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  • Buy cheap XRF286S Solid State 1296 MHz Amplifier Ic Chips Power Mosfet N Channel Rf Amplifier Transistor product
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    Brand Name:KAIGENG
    Model Number:XRF286S
    Place of Origin:Malaysia

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    Shenzhen Kaigeng Technology Co., Ltd.
    [Guangdong,China]
  • Buy cheap Integrated Circuit Chip ADL5205ACPZ 35 dB Range 2 Channel RF Amplifier IC product
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    Brand Name:Original Factory
    Model Number:ADL5205ACPZ
    Place of Origin:CN

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  • Buy cheap MW6S004 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET FSL RF Power Transistors SMD product
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    Brand Name:FSL
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    Place of Origin:MALAYSIA

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    Brand Name:Analog Devices Inc.
    Model Number:HMC789ST89ETR
    Place of Origin:Multi-origin

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    ...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain Gate Voltage: ... more
    Brand Name:ON
    Model Number:MMBF5484
    Place of Origin:ON

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    Brand Name:original
    Model Number:MRF9045LR1
    Place of Origin:original

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    Brand Name:VBE
    Model Number:VBE10R5
    Place of Origin:CHINA

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    [Guangdong,China]
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    Place of Origin:china

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    Brand Name:Semelab
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    Place of Origin:UK

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    Wisdtech Technology Co.,Limited
    [Guangdong,China]
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    Brand Name:Mitsubishi
    Model Number:RD06HVF1
    Place of Origin:CN

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    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
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    Brand Name:SZHUASHI
    Model Number:YP40601625T
    Place of Origin:Jiangsu, China

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    ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
    Brand Name:NXP
    Model Number:BFS505
    Place of Origin:CHINA

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    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
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    Brand Name:TX TELSIG
    Model Number:YP2233W
    Place of Origin:China

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    Shenzhen TeXin electronic Co., Limited
    [Guangdong,China]
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    ...RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Packaging: Reel Brand: Vishay Semiconductors Channel... more
    Brand Name:VISHAY
    Model Number:S525T-GS08
    Place of Origin:USA

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    Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage... more
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    Model Number:PD57018-E
    Minimum Order Quantity:1000

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  • Buy cheap 2 Channel High Voltage RF Amplifier , 1450MHz 1500MHz Wireless Signal Boosters product
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    Brand Name:MXT
    Model Number:TDD1450T1500M 2x10W-28V
    Place of Origin:China

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    ... 10000Q (MST-4130) Switch Mode 4 Channel 4x1300W Amplifier Quick Detail: 1. Light weight, 4-channel switch mode amplifier, 4x1300W @ 8Ω. 2. Fixed with original NOVER(from UK) power capacitors and SK power transistors to achieve good sound quality. Actual ... more
    Brand Name:HOT DEVICES
    Model Number:FP 10000Q (MST-4130)
    Place of Origin:GuangZhou,China

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    PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates... more
    Brand Name:Texas Instruments
    Model Number:PD85035S-E
    Place of Origin:Malaysia

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    Angel Technology Electronics Co
    [Hongkong,China]
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    ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
    Model Number:BFS505
    Place of Origin:CHINA

    BFS505,115 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

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