-
Product Detail Parametrics FZ1200R12HE4 Applications Drives ; Solar ; UPS ; Wind Configuration Single switch Dimensions (width) 140.0 mm Dimensions (length) 130.0 mm Housing IHM B IC(nom) / IF(nom) 1200.0 A Qualification Industrial Technology IGBT4 - E4 ...
Product Detail Parametrics FZ1200R12HE4 Applications Drives ; Solar ; UPS ; Wind Configuration Single switch Dimensions (width) 140.0 mm Dimensions (length) 130.0 mm Housing IHM B IC(nom) / IF(nom) 1200.0 A Qualification Industrial Technology IGBT4 - E4 ... more
Brand Name:Original
Model Number:FZ1200R12HE4
Place of Origin:US
-
IGBT-modules FF150R12RT4 The half-bridge 34 mm 1200 V, 150 A dual IGBT modules 34mm module Highest reliability Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low ...
IGBT-modules FF150R12RT4 The half-bridge 34 mm 1200 V, 150 A dual IGBT modules 34mm module Highest reliability Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low ... more
Brand Name:Infineon
Model Number:FF1500R12IE5
Place of Origin:China
1200V Dual IGBT Power Module FF75R12RT4 34 Mm Fast Trench / Fieldstop IGBT
-
DD800S45KL3B5 Automotive IGBT Modules Diodes IGBT EC3 Module 800A Schottky Diodes Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
-
... Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning,
-
...Diode Module MDD44-16N1B High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Applications Diode...
...Diode Module MDD44-16N1B High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Applications Diode... more
Brand Name:Mitsubishi
Model Number:MDD44-16N1B
Place of Origin:Japan
VDE High Power IGBT Module , IXYS Thyristor Diode Module MDD44-16N1B
-
... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as
-
1200 V, 450 A dual IGBT module The half-bridge 62mm C-series 1200 V, 450 A dual IGBT modules with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode is the right choice for your design. Also available with Thermal Interface Material. Summary...
-
[Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic components sale and service for clients over 20 years, ...
[Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic components sale and service for clients over 20 years, ... more
Brand Name:Crydom
Model Number:M50100THA1600
Place of Origin:CHINA
IGBT Power Module M50100THA1600 DIODE MODULE 1.6KV 100A
-
High Performance Black Insulated Gate Bipolar Transistor For General Purpose Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, ...
High Performance Black Insulated Gate Bipolar Transistor For General Purpose Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, ... more
Brand Name:MMR
Place of Origin:China
price:Competitive
MMR Insulated Gate Bipolar Transistor Diode Modules IGBT 400a 600v 1200v
-
... diode and NTC. Also available with pre-applied Thermal Interface Material. By switching to the FS500R17OED_B81 protected by our H2S technology, the IGBT module shows no growth of copper-sulfide (Cu2S) crystalline in comparison to the standard module. As
-
...IGBT by Infineon Technologies IGBT in TRENCHSTOP™ and Fieldstop technology with soft fast recovery anti-parallel Emitter Controlled HE diode Applications: Frequency Converters Uninterrupted Power Supply More Similar IGBT part number for General Semiconductor: PART NUMBER MFG PACKAGE IKW75N60T INFINEON TO-247 IKW75N60H3 INFINEON TO-247 IKW75N65EL5 INFINEON TO-247 7MBP150VEA120-50 FUJI MODULE...
...IGBT by Infineon Technologies IGBT in TRENCHSTOP™ and Fieldstop technology with soft fast recovery anti-parallel Emitter Controlled HE diode Applications: Frequency Converters Uninterrupted Power Supply More Similar IGBT part number for General Semiconductor: PART NUMBER MFG PACKAGE IKW75N60T INFINEON TO-247 IKW75N60H3 INFINEON TO-247 IKW75N65EL5 INFINEON TO-247 7MBP150VEA120-50 FUJI MODULE... more
Brand Name:Infineon Technologies
Model Number:IKW75N60TXK
Place of Origin:Philippines
IKW75N60TXK IKW75N60 K75T60 DISCRETE IGBT By Infineon Technologies
-
...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V
...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V more
Brand Name:Infineon Technoctifier Ilogies/International ReOR
Model Number:IHW30N160R2FKSA1
Minimum Order Quantity:1 piece
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
-
2MBI75N-060 IGBT POWER DIODE MODULE 600V 75A IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal ...
-
...IGBT Power Module Single switch with chopper diode Including fast free - wheeling diodes Infineon Germany new original high qualiy hot offer N-CH 1.2KV 125A BSM75GD120DLC : IGBT module Parameter Value Maker Infineon Type IGBT module Products IGBT Silicon Modules...
...IGBT Power Module Single switch with chopper diode Including fast free - wheeling diodes Infineon Germany new original high qualiy hot offer N-CH 1.2KV 125A BSM75GD120DLC : IGBT module Parameter Value Maker Infineon Type IGBT module Products IGBT Silicon Modules... more
Brand Name:INFINEON
Model Number:BSM75GD120DLC
Place of Origin:Germany
1.2KV 125A Single Switch Chopper Diode Infineon BSM75GD120DLC
-
IGBT MODULE (U series) 1200V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Item Symbol Condition C Characteristics Max. Unit Thermal resistance ( 1 device ) Rth(j-c) Inverter IGBT - - 0.45 °C/W Inverter FWD - - 0.73 Brake IGBT - - 0.76 Converter Diode...
IGBT MODULE (U series) 1200V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Item Symbol Condition C Characteristics Max. Unit Thermal resistance ( 1 device ) Rth(j-c) Inverter IGBT - - 0.45 °C/W Inverter FWD - - 0.73 Brake IGBT - - 0.76 Converter Diode... more
Brand Name:STANDAR
Model Number:7MBR75UB120-50
Place of Origin:100% new & original
7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Low VCE(sat) Compact Package
-
... - Positive temperature coefficient • Free wheeling diodes with fast and soft reverse recovery • Industrial standard package with copper base plate Applications of IGBT • Welder / Power Supply • UPS / Inverter • Industrial motor driver ■Terms &
... - Positive temperature coefficient • Free wheeling diodes with fast and soft reverse recovery • Industrial standard package with copper base plate Applications of IGBT • Welder / Power Supply • UPS / Inverter • Industrial motor driver ■Terms & more
Brand Name:KRUNTER
Model Number:KWG600H12N4B
Place of Origin:CHINA
Industrial IGBT Module KWG600H12N4B Copper Base Plate Igbt Modul
-
...IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode...
...IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode... more
Brand Name:Infineon Technologies
Model Number:IRGP4068DPBF
Place of Origin:original
IRGP4068DPBF IGBT Power Module With Low VCE(Sat) And Low EMI
-
IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT) IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal...
IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT) IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal... more
Brand Name:IXYS
Model Number:IXBT14N300HV
Minimum Order Quantity:50pcs
TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
-
...IGBT Module IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems. 1. Core Components and Operating Principles IGBT Chips: The core of the module...
...IGBT Module IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems. 1. Core Components and Operating Principles IGBT Chips: The core of the module... more
Brand Name:ZFeng
Payment Terms:L/C,D/A,D/P,T/T,Western Union,MoneyGram
Delivery Time:3 Days
Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter