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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ... more
Brand Name:ON/Fairchild
Model Number:G40N60UFD
Place of Origin:Original Factory
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...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs
...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs more
Brand Name:onsemi
Model Number:AFGHL40T120RLD
Minimum Order Quantity:50pcs
1200V 48A 529W IGBT Transistor Module , Trench Field Stop IGBT AFGHL40T120RLD
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.... This reliable NPT IGBT transistor offers several benefits, including: Pros: - Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power management in your electronic devices. -
.... This reliable NPT IGBT transistor offers several benefits, including: Pros: - Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power management in your electronic devices. - more
Brand Name:IXYS
Model Number:IXGH48N60C3D1
Part number:IXGH48N60C3D1
High Speed IGBT Transistor Module IXGH48N60C3D1 For 40-100kHz Switching
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...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...
...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si... more
Brand Name:ST
Model Number:STGW80H65DFB
Place of Origin:Original
STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
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Automotive IGBT Modules FS50R12W2T7P IGBT Modules 1200V IGBT Transistors Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...
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...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT...
...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT... more
Brand Name:Eupec
Model Number:FS150R12KE3
Place of Origin:Germany
Industrial Eupec High Power IGBT Module FS150R12KE3 IGBT Transistors Module
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... K30H603 IGBT Transistors IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: IGBT Transistors RoHS...
... K30H603 IGBT Transistors IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: IGBT Transistors RoHS... more
Brand Name:Infineon / IR
Model Number:IKW30N60H3
Place of Origin:Germany
IKW30N60H3 Flash Memory IC Chip Silkscreen K30H603 IGBT Transistors
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...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ...
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...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT...
...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT... more
Brand Name:Infineon
Model Number:AUIRG4PH50S
Place of Origin:TAIWAN
AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
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... Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast...
... Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast... more
Brand Name:Microchip
Model Number:APT25GT120BRG
Place of Origin:USA
APT25GT120BRG Discrete Semiconductors TO-247-3 IGBT Transistors
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IKW25T120 Through Hole IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●...
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... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A ...
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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ...
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ... more
Brand Name:Anterwell
Model Number:ISL9V3040S3ST
Place of Origin:original factory
ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor
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Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series TrenchStop® Packaging Tube Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1350V Current - ...
Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series TrenchStop® Packaging Tube Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1350V Current - ... more
Brand Name:Original
Model Number:IHW30N135R3FKSA1
Place of Origin:US
H20R1203 H30R1602 H25R1202 H20R1353 349W IGBT Transistor TO-247
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...Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Origin: China Material: N-channel IGBT...
...Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Origin: China Material: N-channel IGBT... more
Model Number:JT015N065FED
Pd - Power Dissipation:31W
Td(off):-
Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
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260A 280A 400Amps Liquid Cooling Engine Welder Diesel Generator This advanced diesel-powered welding machine features IGBT transistor control and combines welding capabilities with generator functionality. The engine-driven welder utilizes a diesel-fueled ...
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...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative ...
...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative ... more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IHW30N160R2FKSA1
Place of Origin:CHINA
IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
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...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative ...
...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative ... more
Brand Name:Infineon Technoctifier Ilogies/International ReOR
Model Number:IHW30N160R2FKSA1
Minimum Order Quantity:1 piece
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
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... 1.6-4.0MM wire diameter 0.8/1.0MM duty cycle 60% weight 13.0KG Features 1. single phase 220v 2. powerful IGBT transistor 3. effortless one touch setup, easy adjustment and operation. 4. digital
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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ...
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ... more
Model Number:ISL9V3040S3ST
Place of Origin:original factory
ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor