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KTC1898 SOT-89 General Transistor

Supply Ability: 100000000 Pack/Packs per Month pcs
Price: Get Latest Price
Packaging Details: Min 1K
Delivery Time: 30days
Port: ShenZhen
Payment Terms: L/C,T/T
MOQ: 3000 Pack/Packs pcs
Place of Origin: Guangxi
Brand Name: GSME
Model Number: KTC1898
Package Type: Surface Mount
Type: Other
Category: Transistors
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KTC1898 SOT-89 General Transistor


IW (Mounted on Ceramic Substrate)
Small Flat Package
Complementary to KTA1664

KTC1898 SOT-89 General Purpose Transistor

MAXIMUM RATINGS(Ta=25)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCBO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

400

mA

Base Current

IB

80

mA

Collector Power Dissipation

PC

500

mW

PC*

1

W

Junction Temperature

Tj

150

-

Storage Temperature Range

Tstg

-55~150

-

-

-

ELECTRICAL CHARACTERISTICS(TC=25 unless otherwise noted)

-

characteristic

symbol

Min

Max

Unit

-

OFF CHARACTERISTICS

-

Collector-Base Breakdown Voltage------------------ ( Ic=1.0mA,IB=0)

V(BR)CBO

150

-

V

-
-

Collector-Emltter Breakdown Voltage---- ----( IC=5.0mA,IB=0)

V(BR)CEO

150

-

V

-
-

Emitter-Base- Voltage--------------------- ( IB=1.0mA,IC=0)

VEBO

5.0

-

V

-
-

Collector Cutoff Current------------------ ( VCB=120V,IE=0)

ICBO

-

10

μ A

-
-

-Emitter Cutoff- Current------------------ ( VEB=5.0V,IC=0)

IEBO

-

10

μ A

-
-

ON CHARACTERISTICS(1)

-

DC Current Gain------------ IC=0.5A,VCE=10V

Hfe

40

140

-

-
-

Collector-Emltter Saturation Voltage--------- (IC=0.5A,IB=50mA)

VCE(sat)

-

1.5

V

-
-

Base-Emitter On Voltage IC=500mA,VCE=10V

VBE(on)

0.65

0.85

V

-
-

DYNAMIC CHARACTERISTICS

-

Current-Gain-Bandwidth Product (IC=0.5A,VCE=10V,f=1.0MHZ)

fT

4

-

MHZ

-
-

-

(1)--- Pulse Test Pulse Width=300μs,Duty Cycle- less than 2.0%.

(2)--- If you want more information on the parameters of the product, please contact us

Product Tags:

ceramic substrate

  
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