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...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride...
...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride... more
Brand Name:zmkj
Model Number:GaN-2INCH 10x10mm
Place of Origin:CHINA
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...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride
...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride more
Brand Name:zmkj
Model Number:GaN-FS-C-D-C50-SSP 2inch
Place of Origin:CHINA
Si Fe Doped Undoped Gallium Nitride Wafer 2 INCH Laser Projection Display
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Product Description: GS-ABC-2835S Gallium Nitride Ultraviolet Photodiode Is Used For Flame Detection Features: General Features: l UVA+UVB+UVC photodiode l Photovoltaic mode operation l ...
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... crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed...
... crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed... more
Brand Name:GaNova
Model Number:JDCD01-001-018
Place of Origin:Suzhou China
GaN Single Crystal Gallium Nitride Wafer SI Type
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PD3.0 Notebook GaN Gallium Nitride 65W Gallium Nitride Charger Pd Fast Charge Mobile Phone Charger 3c Charging Head Indicating function With indication function Input ...
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Pulse laser diode with drive Pulse laser diode with Collimating lens Pulse laser diode with Optical fiber Multi wavelength integrated LED + multi chip integrated high power LED + parallel LED + optical fiber LED Flame detector / UV TRON Introduction of ...
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...gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and ...
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Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire ...
Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire ... more
Brand Name:Silian
Model Number:Customized
Place of Origin:China
Gallium Nitride On Sapphire Semiconductor GaN 100mm
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Mini PD QC Fast Charging 65W GaN Wall Charger EU Plus Universal Charger Products Features 1, The macebook will be changed full about 90 minuties 2, High efficiency charging& Low heat dissapation 3, Smaller size, only want 35. 7* 35. 7* 52mm 4, Full ...
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...Gallium liquid Main usage thermometer filling, coolant, chip MOQ 1000g Application 1. Preparation of Gallium Arsenide(GaAs), Gallium Phoshpide(GaP) and Gallium Nitride(GaN) for wireless communication, LED illumination 2. GaAs concentrated solar cell and CIGS
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... of all kinds of hard brittle materials(monocrystalline silicon, polycrystalline silicon, germanium, gallium arsenide, quartz, indium gallium nitride, gems, non-metallic materials, etc.),It's environmentally friendly. the features of excellent lubrication
... of all kinds of hard brittle materials(monocrystalline silicon, polycrystalline silicon, germanium, gallium arsenide, quartz, indium gallium nitride, gems, non-metallic materials, etc.),It's environmentally friendly. the features of excellent lubrication more
Brand Name:JUNHE
Model Number:JH-2521-1
Place of Origin:Changzhou in china
Cleaning Agent Metal Cutting Fluid Hydrogen Inhibition
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... power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to
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TPH3208LDG Specifications Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max ...
TPH3208LDG Specifications Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max ... more
Place of Origin:Original
Part Number:TPH3208LDG
Manufacturer:Transphorm
TPH3208LDG Field Effect Transistor Transistors FETs MOSFETs Single
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LMG1210RVRR / WQFN-19 / Power Management ICs The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that features adjustable deadtime ...
LMG1210RVRR / WQFN-19 / Power Management ICs The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that features adjustable deadtime ... more
Brand Name:Texas Instruments
Model Number:LMG1210RVRR
Place of Origin:Malaysia
LMG1210RVRR Power Management ICs WQFN-19 MOSFET Gate Drivers
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...Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power...
...Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power... more
Brand Name:Analog Devices Inc.
Model Number:HMC199MS8ETR
Place of Origin:Multi-origin
HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency
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Half Bridge Driver General Purpose Gallium Nitride (GaN) FETs 14-QFN (3.5x5)
Half Bridge Driver General Purpose Gallium Nitride (GaN) FETs 14-QFN (3.5x5) more
Category:Integrated Circuits (ICs)
Power Management (PMIC)
Full Half-Bridge Drivers
Fault Protection:ESD, UVLO
Operating Temperature:-40°C ~ 125°C (TJ)
EPC23101ENGRT
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Half Bridge Driver AC Motors, DC Motors, DC-DC Converters, General Purpose Gallium Nitride (GaN) FETs 13-WQFN-HR (3.5x5)
Half Bridge Driver AC Motors, DC Motors, DC-DC Converters, General Purpose Gallium Nitride (GaN) FETs 13-WQFN-HR (3.5x5) more
Category:Integrated Circuits (ICs)
Power Management (PMIC)
Full Half-Bridge Drivers
Fault Protection:Current Limiting, ESD, Over Voltage, UVLO
Operating Temperature:-40°C ~ 125°C (TJ)
EPC23102ENGRT
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... voltage charger is a high-speed charging device made of fireproof PC material and powered by gallium nitride. It can be used to charge various electronic devices with its adjustable output voltage, ranging from 5V, 9V, 12V, 15V to 20V. With its amazing ...
... voltage charger is a high-speed charging device made of fireproof PC material and powered by gallium nitride. It can be used to charge various electronic devices with its adjustable output voltage, ranging from 5V, 9V, 12V, 15V to 20V. With its amazing ... more
Brand Name:GEO
Model Number:PD651C-20V 3.25A
Place of Origin:China
20V 3.25A PD 65W GaN Charger USB C QC3.0 Fast Charger For Laptop Phone
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...device combines power, convenience, and versatility to ensure you stay connected wherever you go. Featuring GaN (Gallium Nitride) technology, this charger offers compact size without compromising on power, making it the perfect accessory for your on-the-go